Search

We discuss the effect of topological inhomogeneity of very thin metallic conductometric sensors on their response to external stimuli, such as pressure, intercalation, or gas absorption, that modify the material's bulk conductivity. The classical percolation model was extended to the case in which several independent scattering mechanisms contribute to resistivity. The magnitude of each scattering term was predicted to grow with the total resistivity and diverge at the percolation threshold. We tested the model experimentally using thin films of hydrogenated palladium and CoPd alloys where absorbed hydrogen atoms occupying the interstitial lattice sites enhance the electron scattering. The hydrogen scattering resistivity was found to grow linearly with the total resistivity in the fractal topology range in agreement with the model. Enhancement of the absolute magnitude of the resistivity response in the fractal range thin film sensors can be particularly useful when the respective bulk material response is too small for reliable detection. [ABSTRACT FROM AUTHOR]

In this paper, we present the fabrication of an efficient thin film temperature sensor utilizing chemical vapor deposited carbon nanotube (CNT) film as the sensing element on Si substrates, with diamond-like carbon (DLC):Ni as a catalyst in assisting CNT growth. The fabricated sensor showed good electrical response with change in temperature. Relative linear change in resistance of 18.4% for an increase in temperature from 22 °C to 200 °C was achieved. Various characterizing techniques, such as scanning electron microscopy (SEM) and Raman spectroscopy, were used to characterize the films. In an effort to study device performance, van der Pauw and Hall measurements were carried out to study the dependence of resistance on temperature and magnetic fields. Temperature coefficient of resistance of the sensor was calculated as 1.03 × 10−3/°C. All implications arising from the study are presented. The results establish the aptness of the as-grown CNT film to be used as an active sensing material in thin film temperature sensors. [ABSTRACT FROM AUTHOR]