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In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150°C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials.

Plain or structured hydrophillic silicon wafers covered with native oxide or with thermally grown oxide layers have been directly bonded at room temperature; afterwards, the samples were annealed at 100°C to 400°C. There is a significant difference in the observed bonding energy depending on the wafer pairing chosen. If one or both wafers are covered with a native oxide layer, high bonding strengths are reached even at low temperatures. This can be explained by the different diffusion behaviour of water molecules through a thick thermal oxide layer on one hand, and through a thin native oxide layer on the other hand. Two different methods for the activation of the wafer surfaces just prior to bonding are described.