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Abstract: Amorphous oxide semiconductor InGaZnO (a‐IGZO) thin films were deposited on glass and sapphire substrates using RF magnetron sputtering at room temperature. H2 annealing effect on the electrical conduction, optical transmittance, and structural properties of a‐IGZO films has been systematically studied. Temperature‐dependent electrical conductivity of a‐IGZO films exhibited n‐type degenerated conduction behavior in the range of 10–300 K. Electrical properties of the films do not fit with variable range hopping carrier transport model. Optical transmission of a‐IGZO films has been enhanced by H2 annealing at elevated temperatures. Fourier‐Transform Infrared Spectroscopy analysis indicated formation of O‐H bonding state in H2‐annealed a‐IGZO films which is thermally stable up to 300°C. Electron concentration of a‐IGZO films decreases with annealing temperature above 300°C resulting from the reduced H incorporation from OH absorption. [ABSTRACT FROM AUTHOR]