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Your search keyword '"Brian Cobb"' showing total 5 results
Start Over Author "Brian Cobb" Journal sid symposium digest of technical papers
5 results on '"Brian Cobb"'

1. 29.4: Flexible AMOLED Display with Integrated Gate Driver Operating at Operation Speed Compatible with 4k2k

Author

Gerwin H. Gelinck, Paul Heremans, Abhishek Kumar, Peter Vicca, Mitsuhiro Murata, Ajay Bhoolokam, Jan Genoe, Sarah Schols, Marc Ameys, Brian Cobb, Steve Smout, Myriam Willegems, Kris Myny, Koji Obata, Jan-Laurens van der Steen, Soeren Steudel, Manoj Nag, and Ke Tung Huei

Subjects
Engineering, business.industry, Process (computing), Electrical engineering, law.invention, AMOLED, Backplane, law, Thin-film transistor, Flexible display, OLED, Gate driver, Photolithography, business
Abstract

We present a QVGA (320x240 with 3 sub-pixel) top-emitting AMOLED display with 250ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with full barrier. The back plane process flow is based on a 7 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 80%. An integrated gate driver is shown that can be driven at operation speed equivalent to a 4k2k display at 100Hz

Published
2015

2. 57.4:Invited Paper: Device Physics of Amorphous Oxide Thin-Film Transistors

Author

Ananth Dodabalapur, Bong-Jun Kim, Brian Cobb, Seohee Kim, Chen-Guan Lee, and Leander Schulz

Subjects
Materials science, business.industry, Contact resistance, Transistor, Analytical chemistry, equipment and supplies, Amorphous solid, law.invention, Condensed Matter::Materials Science, Semiconductor, Thin-film transistor, law, Optoelectronics, Charge carrier, Ionization energy, business, Excitation
Abstract

We describe the device and transport characteristics of amorphous zinc tin oxide thin-film (ZTO) transistors. In samples with a sufficiently high mobility and at a high gate voltage, a crossover occurs from transport governed by thermal excitation of trapped charges to one where the charge carriers reside for a sufficiently long time in extended states. Very few semiconductors exhibit this range of behavior in the same device under different conditions. We also describe the correct methods to extract mobility values and ionization energies from current voltage characteristics.

Published
2015

3. 20.1: Flexible AMOLED Display and Gate-driver with Self-aligned IGZO TFT on Plastic Foil

Author

Tim Ellis, Myriam Willegems, Peter Vicca, Yusuke Fukui, Brian Cobb, Tung Huei Ke, Gerwin H. Gelinck, Manoj Nag, Paul Heremans, Abhishek Kumar, Jan-Laurens van der Steen, Koji Obata, Soeren Steudel, Sarah Schols, Robert Muller, Marc Ameys, Steve Smout, Ajay Bhoolokam, Jan Genoe, and Kris Myny

Subjects
Materials science, business.industry, Display device, law.invention, AMOLED, Backplane, Thin-film transistor, law, Flexible display, OLED, Optoelectronics, Photolithography, business, Layer (electronics)
Abstract

We present a QQVGA (160times120 with 3 sub-pixel) top-emitting AMOLED display with 85ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil. The back plane process flow is based on a 5 layer photolithography process. The aperture ratio of the top-emitting OLEDs is approx. 25%. For operation at 6 V supply voltage (VDD), the brightness of the display exceeds 150cd/m2. On the same substrate a 160 stage gate-driver was measured at FHD rate. cop. 2014 Society for Information Display.

Published
2014

4. 13.4: Flexible Low Temperature Solution Processed Oxide Semiconductor TFT Backplanes for Use in AMOLED Displays

Author

Duy Vu Pham, Tim Ellis, Francisco Gonzales Rodriguez, Soeren Steudel, Paul Heremans, Kris Myny, Ajay Bhoolokam, Maarten Rockele, Steve Smout, Peter Vicca, Marko Marinkovic, Arne Hoppe, Jürgen Steiger, Ralf Anselman, Jwj Joris Maas, Brian Cobb, G Gerwin Gelinck, and J. L. van der Steen

Subjects
Materials science, Oxide semiconductor, AMOLED, Backplane, business.industry, Flexible display, Thin-film transistor, Moisture barrier, Optoelectronics, Thin film, business, Solution processed
Abstract

AMOLED backplanes were fabricated on both rigid glass and flexible plastic substrates using a solution processed oxide semiconductor processed at temperatures

Published
2014

5. Paper No S12.5: Self-Aligned a-IGZO TFTs: Impact of S/D Contacts Formation on Their Negative-Bias-Illumination-Stress (NBIS) Instability

Author

Steve Smout, Abhishek Kumar, Paul Heremans, Manoj Nag, Ajay Bhoolokam, Jan Genoe, Groeseneken Guido, Brian Cobb, and Soeren Steudel

Subjects
Argon, Materials science, genetic structures, Hydrogen, business.industry, Doping, chemistry.chemical_element, Nanotechnology, Plasma, Negative bias, Instability, Stress (mechanics), chemistry, Optoelectronics, sense organs, business, Contact formation
Abstract

In this work, we present the impact of S/D contact formation, that is, by SiN plasma doping (hydrogen incorporation), metallic reduction (by calcium) and by argon plasma (compositional change) on NBIS instabilities of self-aligned a-IGZO TFTs.

Published
2015

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