1. 53.1: Development of Oxide-TFT OLED-TV Technologies
- Author
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Chih-Cheng Chen, Hong-Shen Lin, Chun-Hsin Liu, Yu-Hsin Lin, Chia-Yu Chen, Tsung-Hsiang Shih, Lun Tsai, Hong-Jye Hong, Chih-Lei Chen, Li-Fong Lin, Lee-Hsun Chang, Hung-Che Ting, and Lin Pei-Ling
- Subjects
Materials science ,business.industry ,Thin-film transistor ,Electrical engineering ,OLED ,Optoelectronics ,Chemical vapor deposition ,Metalorganic vapour phase epitaxy ,business ,Oxide thin-film transistor ,Amorphous solid ,Compensation (engineering) ,Threshold voltage - Abstract
We reported amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) TFT OLED TV panel development in AUO. The Generation 6 (G6) threshold voltage uniformity can be lower than 0.8V. The RGB side-by-side OLED patterning was realized by fine metal mask. By the application of a source follower connection pixel compensation circuit, the panels driven by AUO engine show excellent characteristics. For future product performance requirement, amorphous Indium-Tin-Zinc-Oxide (a-ITZO) TFT was developing, high mobility as 33.2 cm2/Vs was achieved. Metal-organic chemical vapor deposition (MOCVD) system was also used to improve the mobility of IGZO TFT. To improve manufacturing efficiency of OLED process, inkjet printing technology is also under development in AUO.
- Published
- 2014