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We reported amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) TFT OLED TV panel development in AUO. The Generation 6 (G6) threshold voltage uniformity can be lower than 0.8V. The RGB side-by-side OLED patterning was realized by fine metal mask. By the application of a source follower connection pixel compensation circuit, the panels driven by AUO engine show excellent characteristics. For future product performance requirement, amorphous Indium-Tin-Zinc-Oxide (a-ITZO) TFT was developing, high mobility as 33.2 cm2/Vs was achieved. Metal-organic chemical vapor deposition (MOCVD) system was also used to improve the mobility of IGZO TFT. To improve manufacturing efficiency of OLED process, inkjet printing technology is also under development in AUO.

We reported a 65 inches amorphous oxide thin film transistors active-matrix organic light-emitting diode television panel. The thin film transistor shows an excellent characteristic. The long range threshold voltage uniformity is 0.34V. The side by side organic light-emitting diode device is realized by fine metal mask. The dam and fill encapsulation method shows a simple process procedure and high stability.

We present the light-on results of our 65-inch organic ***light-emitting diode (OLED) panel fabricated by the inkjet printing (IJP) process. The panel uses solution-processable OLED material for the hole injection layer (HIL), the hole transporting layer (HTL) and the emitting layers (EML) for the red, green and blue colors. It is found that fine-tuning the vacuum dry speed after the inkjet printing process can improve the uniformity of the pixels. The results show that we can successfully fabricate a 65-inch OLED panel with a high degree of pixel uniformity.

AMOLED displays based on metal oxide film as active channel layer are fabricated. To achieve cost-competitive process in OLED manufacturing, solution-processed HIL, HTL and pixilated EML (RGB) layers followed by evaporation process for other layers are demonstrated in this work. Meanwhile, the AMOLED backplanes possessing low power consumption and high frequency were fabricated on metal oxide TFTs with high mobility (23.13 cm2/Vs) technology. A 14” qHD AMOLED in 79 ppi-resolution was realized with IGZO based active matrix panel.

We demonstrated a defect free 32-inch large scaled amorphous indium-gallium-zinc-oxide based active-matrix organic light-emitting diode television panel. The panel achieves good image quality, such as high contrast ratio, a wide viewing angle, and fast response time, and the module thickness is only 3 mm. The thin film transistor shows excellent characteristic and the compensation pixel circuit is used. The side by side organic light-emitting diode device is realized by fine metal mask.