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Interface strain significantly affects the band structure and electronic states of metal‐nanocrystal‐2D‐semiconductor heterostructures, impacting system performance. While transmission electron microscopy (TEM) is a powerful tool for studying interface strain, its accuracy may be compromised by sample overlap in high‐resolution images due to the unique nature of the metal‐nanocrystals‐2D‐semiconductors heterostructure. Utilizing digital dark‐field technology, the substrate influence on metal atomic column contrasts is eliminated, improving the accuracy of quantitative analysis in high‐resolution TEM images. Applying this method to investigate Pt on MoS2 surfaces reveals that the heterostructure introduces a tensile strain of ≈3% in Pt nanocrystal. The x‐directional linear strain in Pt nanocrystals has a periodic distribution that matches the semi‐coherent interface between Pt nanocrystals and MoS2, while the remaining strain components localize mainly on edge atomic steps. These results demonstrate an accurate and efficient method for studying interface strain and provide a theoretical foundation for precise heterostructure fabrication. [ABSTRACT FROM AUTHOR]