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Planar-structure perovskite solar cells have attracted more and more attention, because their simple and low-temperature preparation processing. However, the performance of perovskite solar cells is currently limited by defect-induced recombination at interfaces between perovskite and charge transport layers. In this work, a filmy poly methyl methacrylate (PMMA) layer introduced in Perovskite/Spiro-OMeTAD interface to passivate the interfacial and interganular defects, by which a high open-circuit voltage (1.18 V) is acquired, and the optimal device shows a steady-state power conversion efficiency of 20.5% and negligible hysteresis. Femtosecond transient absorption measurement confirms a significant reduction in non-radiative recombination for passivated devices. Mott-Schottky measurement indicates improved flat band potential and carrier density in passivated devices, consisting with the increased voltage. In addition, PMMA film can protect perovskite film from moisture and oxygen erosion. The unsealed device still maintains 95% of the initial efficiency under ambient conditions with 60% relative humidity for one month. This approach solves one of the main limitations of interfacial recombination and shows its potential to improve the performance of perovskite solar cells in the future. • An ultrathin polymer film is used to passivate the interfacial and intergranular defects in PSCs. • The modified PSC shows a steady-state power conversion efficiency of 20.5% and negligible hysteresis. • The fs-TA measurement is implemented for analyzing transfer and recombination dynamics of the photo-generated carrier. • The PMMA film plays the role of encapsulation which could protect perovskite film from moisture and oxygen erosion. [ABSTRACT FROM AUTHOR]

SnO 2 electron transport layers (ETLs) had an essential role in the n-i-p structure of perovskite solar cells. Improving the quality of the electron transport layer and enhancing interfacial contacts were key factors in the fabrication of high-performance perovskite solar cells. Therefore, a non-ionic polymeric polyacrylamide (PAM) modified SnO 2 colloidal solution with improved clustering of SnO 2 nanoparticles was presented to form a uniform and dense SnO 2 electron transport layer. The results demonstrated that no pinhole pores were found at the interface where the PAM-modified electron transport layer and the light absorbing layer came into contact, a structure that facilitated carrier transport and reduced carrier recombination at the interface location. Further beneficial effects were revealed by femtosecond Fs-TA measurements and trap of states (tDOS) analysis, where the carrier lifetime τ 2 decreased from 306.7 ps to 137.8 ps and the trap density of states of the film also decreased significantly. Correspondingly, the SnO 2 -PAM device exhibited an optimum efficiency of 21.61 %. Fantastic device stability was obtained due to the interaction of excellent contact at the SnO 2 /FAPbI 3 interface, and 85 % of the initial efficiency was maintained when placed in air for 1000 h for photo-aging tests, thereby improving the stability of FAPbI 3 grains. This method of improving the quality of tin oxide colloidal solutions provided a novel and simple way to prepare efficient perovskite solar cells. [ABSTRACT FROM AUTHOR]