1. Crystal quality improvement of solid-phase crystallized evaporated silicon films by in-situ densification anneal
- Author
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He, Song, Hoex, Bram, Inns, Daniel, Brazil, Ian C., Widenborg, Per I., and Aberle, Armin G.
- Subjects
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SILICON crystals , *CRYSTALLIZATION , *THIN films , *HEAT treatment , *SEMICONDUCTOR wafers , *EVAPORATION (Chemistry) , *OXYGEN , *RELAXATION for health , *STRUCTURAL analysis (Science) - Abstract
Abstract: An in-situ densification anneal at 550°C was applied to e-beam evaporated a-Si films on Si (100) wafers in a non-UHV environment. The c-Si films were then obtained by annealing the as-deposited a-Si films at 575°C in a tube furnace. It is shown that the crystal quality of the c-Si films obtained from low-rate (50nm/min) evaporated a-Si film is considerably improved by the densification anneal, whereas densification has no beneficial effect on c-Si films obtained from high-rate (300nm/min) evaporated a-Si. However, the improvement of c-Si obtained from low-rate evaporated a-Si is not due to a significant difference in the oxygen content in the films. It is suggested that the improvement of the c-Si films is related to structural relaxation induced by the densification anneal of low-rate evaporated a-Si. [Copyright &y& Elsevier]
- Published
- 2009
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