Search

This is the peer reviewed version of the following article: Lopez-Garcia, A. [et al.]. Ultrathin a-Si:H/Oxide transparent solar cells exhibiting UV-Blue selective-like absorption. "Solar RRL", 15 Febrer 2023, which has been published in final form at https://onlinelibrary.wiley.com/doi/10.1002/solr.202200928. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. Herein, the fabrication of transparent solar cells based on nanometric (8 and30 nm) intrinsic hydrogenated amorphous siliconfilms (a-Si:H) and using oxidethinfilms as transparent carrier selective contacts are reported. The ultrathindevices present photovoltaic effect and high average visible transmittance (AVT).Additionally, they display a shifted spectral response toward short wavelengths.Glass/fluorine-doped tin oxide (FTO)/aluminum-doped zinc oxide (AZO)/a-Si:H/MoO3/indium tin oxide (ITO) prototypes are shown, presenting AVT=35% andphotovoltaic conversion efficiency (PCE)=2% for a device with a 30 nm a-Si:Hfilm. This yields a light utilization efficiency (LUE) of 0.7%, a record up to this datefor inorganic oxide-based transparent solar cells. For devices including an 8 nma-Si:Hfilm, the AVT reaches 66% with a PCE=0.6% (LUE=0.4%). These highAVT values are comparable or even superior in some cases to those achieved forpure oxide devices. Thesefindings confirm the potential of the proposedarchitectures for the development of highly transparent energy harvesters asfunctional components in building-integrated photovoltaics (BIPV), agrophoto-voltaics (APV), sensors and other low-power devices. In addition, these devicesare fabricated with earth-abundant materials and with up-scalable techniquesthat can allow for a feasible implementation.

This work explores the thermal stability of antimony-based photovoltaic (PV) technologies investigating the effect of low-temperature (50—350¿°C) postdeposition annealings (PDAs) on bare Sb2Se3 absorbers and complete SLG/Mo/Sb2Se3/CdS/i-ZnO/ITO devices (5.7% power conversion efficiency with no anti-reflecting coating or metallic grid). A comprehensive structural analysis by means of X-ray diffraction and Raman spectroscopy, coupled with optoelectronic characterization, reveals clear evidences of a degradation process dominated by selenium diffusion. The degradation process is observed to start at low PDA temperatures as a shrinkage of the Sb2Se3 unit cell. Further increasing the PDA temperature above 200¿°C leads to the formation of Sb oxides and Se secondary phases in bare absorbers, and of CdS1—x Se x in complete devices at the Sb2Se3 front interface which completely degrade the heterojunction and kill device performance. Furthermore, a clear correlation is found between PV performance decrease and Sb2Se3 layer lattice shrinkage with the increasing PDA temperature (T¿>¿50¿°C). This is the first time that thermal instability is reported for the Sb2Se3 compound at temperatures commonly used during PV module fabrication processes such as emitter/transparent conducting oxide deposition or encapsulation.

This is the peer reviewed version of the following article: Lopez-Garcia, A. [et al.]. Ultrathin wide-bandgap a-Si:H-based solar cells for transparent photovoltaic applications. "Solar RRL", 1 Gener 2022, vol. 6, núm. 1, p. 2100909:1-2100909:8. , which has been published in final form at https://onlinelibrary.wiley.com/doi/full/10.1002/solr.202100909. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. Herein, the fabrication of UV-blue selective transparent solar cells based on ultrathin (

This work reports experimental evidence of a photovoltaic effect in transparent UV-selective Zn(O,S) based heterojunctions. Zn(O,S) has a strong interest for the development of UV-selective solar cells with high transparency in the visible region, required for the development of nonintrusive building-integrated pho- tovoltaic (BIPV) elements as transparent solar windows and glass-based solar façades. By anion alloying, Zn(O,S) mixed crystal absorbers can be fabricated with different sulfur content across the whole compositional range. This allows adjustment of the bandgap of the absorbers in the 2.7–2.9 eV region, maximizing absorption in the UV, while keeping a high level of transparency. Zn(O,S) alloys with composition corresponding to S/(S þ O) content ratios of 0.6 are successfully grown by sputtering deposition, and first glass/FTO/NiO/Zn(O,S)/ITO device prototypes are produced. The resulting device present an average visible transmittance (AVT) of 75% and present photovoltaic effect. By introducing a thin C60 film as electron transport layer (ETL), charge extraction is enhanced, and devices show an efficiency of 0.5% and an AVT > 69%. The transparency of these devices can potentially allow for their ubiquitous installation in glazing systems as part of nonintrusive BIPV elements or to power Internet of Things (IoT) devices and sensors as an integrated transparent component., This work has received funding from the European Union H2020 Framework Programme under Grant Agreement no. 826002 (Tech4Win). Authors from IREC and Universitat de Barcelona belong to the SEMS (Solar Energy Materials and Systems) Consolidated Research Group of the "Generalitat de Catalunya" (Ref. 2017 SGR 862). D.P. thanks to the funding from the Basque Country PI2018-08 (PISCES). This project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 712949 (TECNIOspring PLUS) and the Government of Catalonia's Agency for Business Competitiveness (ACCIÓ).