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Abstract: An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E 1) and the refractive index of the InAs nanowires in the internal field induced Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes. [Copyright &y& Elsevier]

Abstract: The second-order transverse acoustic mode and amorphous Raman modes, originating from a continuous random network and medium range ordering (MRO), in high energy light ion (HELI) irradiated GaAs are investigated. The change in the phonon density of states of the transverse acoustic mode phonon distinguishes the effect of HELI irradiation on highly resistive undoped and chromium-doped GaAs. The boson mode, originating from the MRO of the system, has been identified and a model based on phonon-fracton scattering has been used for the explanation of this “boson mode”. The spectral dimension, correlation length and the scaling factor, with which the elastic constant varies with length in MRO regions in GaAs, are estimated. [Copyright &y& Elsevier]