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Start Over Author "Lee, K.H." Journal solid state communications
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14. Effect of electron-beam irradiation on the magnetic properties of Ga1−x Mn x As thin films grown on GaAs (100) substrates

Author

Lee, K.H., Kim, H.J., Park, H.L., Kim, J.S., Kim, T.W., and Koh, D.W.

Subjects
*THIN films, *IRRADIATION, *EPITAXY, *CRYSTAL growth, *MOLECULAR beam epitaxy, *SURFACES (Technology), *SOLID state electronics
Abstract

Abstract: The effect of electron-beam irradiation on the magnetic properties of (Ga1−x Mn x )As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (T c) of the annealed (Ga0.933Mn0.067)As thin films was 160K. The T c value for the as-grown (Ga0.933Mn0.067)As thin films drastically decreased with increasing electron-beam current. This significant decrease in the T c value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga1−x Mn x )As thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation. [Copyright &y& Elsevier]

Published
2005
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