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We investigate fine structure in energy derivative reflectance (EDR) spectra near 20–21 eV in GaP, GaAs, and GaSb, and near 18–20 eV in InP, InAs, and InSb. Derived energy values for Xc1 thresholds in GaP and GaSb, and Lc1 and Xc1 thresholds in GaAs, agree well with previous Schottky barrier electroreflectance (ER) results. L-X structure splittings in EDR spectra of InAs and InSb, for which Schottky barrier ER measurements cannot be performed, are 0.29 and 0.44 eV, respectively. Estimates of expected locations of these structures, based on XPS and absorption data and band structure calculations, indicate energy deficits of 0.2 eV for In4d-Lc1 and 0.5 eV for In4d-Xc1 transitions, respectively.

Reflection spectra of KF, KCl, KBr and KI single crystals have been measured at photon energies of approximately 20 eV with a bandwidth of 10 meV using synchrotron radiation in order to study fine structure and temperature dependence of the excitonic transitions associated with the K + 3 p core level. The crystals were cleaved under ultrahigh vacuum and cooled down to 20 K. Information on energy positions, halfwidths and line shapes for the K + 3 p -core excitons and their temperature dependence has been obtained. A new exciton predicted by the ligand field model was observed. For KI we evaluate an electron-hole exchange energy of only 30 (± 7) meV.