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1. FinFET on SOI: Potential becomes reality.

Author

HOOK, TERENCE B., AHSAN, I., KUMAR, A., MCSTAY, K., NOWAK, E., SAROOP, S., SCHILLER, C., and STARKEY, G.

Subjects
*SEMICONDUCTOR doping profiles, *FIELD-effect transistors, *FIELD-effect transistor circuits, *FIELD-effect devices, *ELECTROSTATICS
Abstract

The article discusses electrical benefits of SOI-based FinFETs. Topics discussed include degradation associated with adding doping to a FinFET, reduction in the minimum operating voltage of the classic 6T SRAM by improved matching and advantages of improving electrostatics associated with the FinFET over conventional doped devices.

Published
2014

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