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Your search keyword '"de Gendt, Stefan"' showing total 4 results
Start Over Author "de Gendt, Stefan" Journal solid state technology
4 results on '"de Gendt, Stefan"'

1. Improving workfunction control of metal gate electrodes

Author

Pantisano, Luigi, Schram, Tom, Heyns, Marc, O'Sullivan, Barry, De Gendt, Stefan, and Guido, Groeseneken

Subjects
Semiconductor industry, Metal oxide semiconductor field effect transistors -- Product introduction -- Usage, Semiconductor industry -- Product introduction, Electrodes -- Usage
Abstract

EXECUTIVE OVERVIEW Next-generation MOSFET devices require the introduction of metal gate (MG) electrodes for further performance increases. A key challenge to implementing MGs, however, is the selection of a metal […]

Published
2006

2. Integrating high-k dielectrics: etched polysilicon or metal gates? (Etch)

Author

Schram, Tom, Beckx, Stephan, De Gendt, Stefan, Vertommen, Johan, and Lee, Steve

Subjects
United States
Abstract

OVERVIEW There is an immediate need for reduced gate leakage/higher capacitance gate stacks for stand-by low power applications. For high-performance applications, where leakage is less of a restraining factor, the […]

Published
2003

3. Sub-1nm EOT scaling for high-k/metal-gate stacks

Author

Heyns, Marc, Schram, T., Ragnarsson, L.-A., De Gendt, Stefan, and Kerber, A.

Subjects
Technology application, Computer software industry -- Research -- Technology application, Dielectrics -- Properties -- Technology application -- Research
Abstract

The aggressive scaling of advanced devices has necessitated the search for a suitable high-k gate dielectric. A material is needed that provides the required specific capacitance at a considerably larger […]

Published
2004

4. Taking 2D materials from lab to fab, and to technology.

Author

DE GENDT, STEFAN, HUYGHEBAERT, CEDRIC, RADU, IULIANA, and THEAN, AARON

Subjects
*TWO-dimensional materials (Nanotechnology), *ELECTRIC properties of graphene, *OPTICAL properties of graphene, *NANOSTRUCTURED materials, *CARBON manufacturing, *MANUFACTURING processes, DESIGN & construction
Abstract

The article focuses on the properties and technological application of two-dimensional (2D) crystals such as graphene and transition metal dichalcogenides. Topics include the capacity of graphene to serve as alternative to silicon (Si)-based transistors, its application on nano-based stacks materials composed of 2D materials such as insulators, metals and semiconductors, and the challenges related to 2D materials manufacturing processes such as gate engineering, patterning, and doping.

Published
2015

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