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In this letter, we report a novel approach to quantitative determination of charge trapping near the channel/drain edge caused by electrical stress. The approach is based on gate-controlled-diode (GCD) measurement. By measuring the GCD drain current in the band-to-band tunneling regime and using the formula developed in this work, the change of the Si surface field resulting from the charge trapping can be calculated instantly, and then the charge trapping is determined quantitatively. It is found that the stress-time dependence of both the surface field change and the charge trapping follow a power law. [Copyright &y& Elsevier]

By dissolving gallium chloride (GaCl 3 ), indium chloride (InCl 3 ), zinc acetate dihydrate [Zn(OAc) 2 ·2H 2 O] and monoethanolamine (MEA) into a solvent of 2-methoxyethanol, the IGZO ink was synthesized. Five types of IGZO ink were prepared with different molar ratios of In:Ga:Zn, which can be used for ink-jet printing process. The thermal behaviors of IGZO ink with different formulas were investigated and the ideal annealing temperature for film formation was found to be ∼450 °C. Based on the prepared ink, amorphous IGZO thin films were directly printed on the glass substrate with a FujiFilm Dimatix ink-jet printer, followed by a thermal annealing at 450 °C for 1 h. The surface morphology, crystal structure, optical transmittance, electron mobility and carrier concentration were characterized and investigated. The ink-jet printed amorphous IGZO thin films fabricated in this work can be used as switching medium in flexible resistive random access memory devices. [ABSTRACT FROM AUTHOR]