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Your search keyword '"Chevalier, Pascal"' showing total 5 results
Start Over Author "Chevalier, Pascal" Journal solid-state electronics
5 results on '"Chevalier, Pascal"'

1. Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Author

Bordignon, Thomas, primary, Duriez, Blandine, additional, Guitard, Nicolas, additional, Duru, Romain, additional, Pribat, Clément, additional, Richy, Jérôme, additional, Reboh, Shay, additional, Dhar, Siddhartha, additional, Monsieur, Frédéric, additional, Fache, Thibaud, additional, Chalupa, Zdenek, additional, Hartmann, Jean-Michel, additional, Chevalier, Pascal, additional, Roelens, Yannick, additional, Danneville, François, additional, and Crémer, Sébastien, additional

Published
2023
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5. Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz.

Author

Deng, Marina, Quémerais, Thomas, Bouvot, Simon, Gloria, Daniel, Chevalier, Pascal, Lépilliet, Sylvie, Danneville, François, and Dambrine, Gilles

Subjects
*BICMOS digital integrated circuits
Abstract

This paper presents a small-signal characterization work on a recently developed 55 nm SiGe BiCMOS technology from STMicroelectronics. The SiGe HBT from a prototype BiCMOS 55 nm process was investigated up to 325 GHz. The full S-parameters from DC to 325 GHz under multiple bias conditions are presented for the first time for a SiGe HBT. A usual and simple approach for the off-wafer calibration associated to an on-wafer de-embedding procedure was used and remained valid up to 325 GHz thanks to a size reduction of the test structures. The extracted 300/325 GHz f T /f MAX couple, reached at 14 mA/μm 2 collector density and 1.2 V collector-emitter voltage, was validated up to 325 GHz. [ABSTRACT FROM AUTHOR]

Published
2017
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