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Abstract: This paper describes realization and characterization of SrTiO3 (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surface capacitance achieved is 10nF/mm2 with capacitance value of 1.2nF. The process for STO MIM fabrication does not exceed 400°C, which is compatible with interconnections. Typical K and dielectric losses values obtained are, respectively 110% and 2%. Yield obtained reaches 83% for capacitors. A functional high pass filter using these STO capacitors was realized in this study. It exhibits a cut-off frequency at 6.5kHz and a constant gain at higher frequencies of −1.3dB. [Copyright &y& Elsevier]