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Start Over Author "Geižutis, Andrejus" Journal solid-state electronics
2 results on '"Geižutis, Andrejus"'

2. Growth and characterization of UTC photo-diodes containing GaAs1-xBix absorber layer.

Author

Geižutis, Andrejus, Pačebutas, Vaidas, Butkutė, Renata, Svidovsky, Polina, Strazdienė, Viktorija, and Krotkus, Arūnas

Subjects
*GALLIUM arsenide, *PHOTODIODES, *BISMUTH compounds, *MOLECULAR structure, *SENSITIVITY analysis, *PHOTOSENSITIVITY
Abstract

Uni-Travelling-Carrier Photo-Diodes (UTC-PD) with GaAs1-xBix absorber layer have been fabricated and characterized. Two UTC-PD structures with and without a cliff layer between the absorber and collector were investigated. The spectral sensitivity dependences are similar for both UTC-PDs and are reaching the wavelength of 1.3 μm. Photosensitivity of structure with a cliff was one order of magnitude larger than that of the device without it. [ABSTRACT FROM AUTHOR]

Published
2014
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