16 results on '"Haendler, S."'
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2. Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs
3. Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature
4. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction
5. Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm
6. Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
7. Unexpected impact of germanium content in SiGe bulk PMOSFETs
8. Characterization and modeling of low frequency noise in CMOS inverters
9. Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs
10. Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below
11. FDSOI devices with thin BOX and ground plane integration for 32nm node and below
12. Shrinking from 0.25 down to 0.12 μm SOI CMOS technology node: a contribution to low-frequency noise in partially depleted N-MOSFETs
13. Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs
14. Reliability of ultra-thin film deep submicron SIMOX nMOSFETs
15. <atl>Reliability of ultra-thin film deep submicron SIMOX nMOSFETs
16. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs.
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