34 results on '"Hu, Chenming"'
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2. Negative capacitance enables GAA scaling VDD to 0.5 V
3. Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs
4. Modeling the impact of substrate depletion in FDSOI MOSFETs
5. BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations
6. Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm
7. A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates
8. On gate leakage current partition for MOSFET compact model
9. Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
10. Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era
11. Plasma charging damage during over-etch time of aluminum
12. Characterization of Global Inversion Layer in Thin-Gate-Oxide Deep-Submicron p-MOSFETs
13. Modeling of small size MOSFETs with reverse short channel and narrow width effects for circuit simulation
14. MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range
15. Hot-carrier-induced degradation in ultra-thin-film fully-depleted SOI MOSFETs
16. MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
17. Polysilicon gate depletion effect on IC performance
18. Bipolar transistor degradation under dynamic hot carrier stress
19. MOSFET saturation voltage
20. Plasma etching antenna effect on oxide-silicon interface reliability
21. Elimination of stress induced oxide leakage in textured tunneling oxide
22. Device-circuit mixed simulation of VDMOS charge transients
23. A p-v-n diode model for CMOS latchup
24. Enhanced conductivity and breakdown of oxides grown on heavily implanted substrates
25. The influence of substrate compensation on inter-electrode leakage and back-gating in GaAs MESFETs
26. Oxide implantation for threshold voltage control
27. Modeling the substrate depletion region for GaAs FETs fabricated on semi-insulating substrates
28. Determination of diffusion length and surface recombination velocity by light excitation
29. Analysis of silicon solar cells with stripe geometry junctions
30. An analytical model for the power bipolar-MOS transistor
31. Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations
32. A versatile compact model of resistive random-access memory (RRAM).
33. Deep learning-based I-V Global Parameter Extraction for BSIM-CMG.
34. Highly scaled (L g ∼56nm) gate-last Si tunnel field-effect transistors with I ON >100μA/μm
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