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Start Over Author "Liu, Fanyu" Journal solid-state electronics
5 results on '"Liu, Fanyu"'

5. Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure.

Author

Huang, Yang, Yan, Yiyi, Nabet, Massinissa, Liu, Fanyu, Li, Bo, Li, Binhong, Han, Zhengsheng, Cristoloveanu, Sorin, and Raskin, Jean-Pierre

Subjects
*ELECTRON traps, *POTENTIAL barrier, *RADIO frequency, *DENSITY, *CRYSTAL grain boundaries
Abstract

• New Double-BOX structure used to characterize trap density in trap-rich layer. • Characterize the trap density by capacitance–voltage method. • Potential barrier at the grain boundary causes the anomalous behavior. • Use a three-element circuit model with tangential approximation method for correction. • Provide a simple method for characterization at wafer level. A new Double-BOX structure is introduced to reveal the electrical properties of undoped polysilicon used to enhance the performance of radio frequency SOI substrates. A plateau is clearly observed in the capacitance–voltage (C-V) characteristics, which is due to the influence of the potential barrier formed at the grain boundary. A tangential approximation method based on a three-element circuit model is proposed for correcting the measured C-V curve. With the corrected C-V curve, the effective trap density distribution in polysilicon is determined for each frequency. [ABSTRACT FROM AUTHOR]

Published
2024
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