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Start Over Author "Yurchuk, Ekaterina" Journal solid-state electronics

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1 results on '"Yurchuk, Ekaterina"'

1. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2.

Author

Martin, Dominik, Yurchuk, Ekaterina, Müller, Stefan, Müller, Johannes, Paul, Jan, Sundquist, Jonas, Slesazeck, Stefan, Schlösser, Till, van Bentum, Ralf, Trentzsch, Martin, Schröder, Uwe, and Mikolajick, Thomas

Subjects
*FIELD-effect transistors, *SILICON, *DOPED semiconductor superlattices, *HAFNIUM oxide, *FERROELECTRICITY, *FERROELECTRIC devices
Abstract

Highlights: [•] Doped HfO2 exhibits ferroelectricity. [•] Ferrolectric HfO2 was integrated in 500 nm and 100 nm FETs. [•] Ferroelectricity induces a VT shift enabling non-volatile data storage. [•] Endurance is 20k cycles and retention can be extrapolated to 10 years. [ABSTRACT FROM AUTHOR]

Published
2013
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