1. Irradiation effect on back-gate graphene field-effect transistor
- Author
-
Ashok Srivastava, Xinlu Chen, Clay Mayberry, and Ashwani K. Sharma
- Subjects
Materials science ,010308 nuclear & particles physics ,business.industry ,Graphene ,Transistor ,Oxide ,02 engineering and technology ,Dissipation ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,0103 physical sciences ,MOSFET ,Optoelectronics ,Field-effect transistor ,Irradiation ,0210 nano-technology ,business ,Graphene nanoribbons - Abstract
The effects of irradiations on MOSFET and bipolar junction transistors are well known though irradiation mechanisms in two-dimensional graphene and related devices are still being investigated. In this work, we investigate irradiation mechanism based on a semi-empirical model for the graphene back-gate transistor and quantitatively analyze the irradiation influences on electrical properties of the device structure. The irradiation shifts the current which changes the region of device operation, degrades the mobility and increases the channel resistance which can increase the power dissipation. The main mechanism causing the degradation in performance of devices is the oxide trap charges near the SiO 2 /graphene interface and graphene layer traps charges.
- Published
- 2017