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A new generation of polycrystalline silicon thin film solar cells is currently being developed in laboratories, employing a combination of novel laser or electron beam based liquid phase crystallization (LPC) techniques and single side contacting systems. The lateral grain size of these polycrystalline cells is in the millimeter range at an absorber thickness of up to 10 μm. In this contribution we present a comparative simulation study of several 1D, 2D and 3D nano-optical designs for the substrate / illumination side interface to the several micrometer thick back contacted LPC silicon absorber material. The compared geometries comprise multilayer coatings, gratings with step and continuous profiles as well as combinations thereof. Using the transfer matrix method and a finite element method implementation to rigorously solve Maxwell’s equations, we discuss anti-reflection and scattering properties of the different front interface designs in view of the angular distribution of incident light.

A smart light trapping scheme is essential to tap the full potential of polycrystalline silicon (poly-Si) thin-film solar cells. Periodic nanophotonic structures are of particular interest as they allow to substantially surpass the Lambertian limit from ray optics in selected spectral ranges. We use nanoimprint-lithography for the periodic patterning of sol-gel coated glass substrates, ensuring a cost-effective, large-area production of thin-film solar cell devices. Periodic crystalline silicon nanoarchitectures are prepared on these textured substrates by high-rate silicon film evaporation, solid phase crystallization and chemical etching. Poly-Si microhole arrays in square lattice geometry with an effective thickness of about 2μm and with comparatively large pitch (2 μm) exhibit a large absorption enhancement (A900nm = 52%) compared to a planar film (A900nm ~ 7%). For the optimization of light trapping in the desired spectral region, the geometry of the nanophotonic structures with varying pitch from 600 nm to 800 nm is tailored and investigated for the cases of poly-Si nanopillar arrays of hexagonal lattice geometry, exhibiting an increase in absorption in comparison to planar film attributed to nanophotonic wave optic effects. These structures inspire the design of prospective applications such as highly-efficient nanostructured poly-Si thin-film solar cells and large-area photonic crystals.

Large grained polycrystalline silicon (poly-Si) absorbers were realized by electron beam induced liquid phase crystallization on 2 μm periodically patterned glass substrates and processed into a-Si:H/poly-Si heterojunction thin-film solar cells. The substrates were structured by nanoimprint lithography using a UV curable hybrid polymer sol-gel resist, resulting in a glassy high-temperature stable micro-structured surface. Structural analysis yielded high quality poly-Si material with grain sizes up to several hundred micrometers. An increase of absorption and an enhancement of the external quantum efficiency in the NIR as a consequence of light trapping due to the micro-structured poly-Si/substrate interface were observed. Up to now, only moderate solar cell parameters, a maximum open-circuit voltage of 413 mV and a short-circuit current density of 8 mA cm-2, were measured being significantly lower to what can be achieved with liquid phase crystallized poly-Si thin-film solar cells on planar glass substrates indicating that the substrate texture has impact on the electrical material quality. By reduction of the SiC interlayer thickness at the micro-structured poly- Si/substrate interface defect-related parasitic absorption was considerably minimized. This encourages the implementation of nanoimprinted tailored substrate textures for light trapping in liquid phase crystallized poly-Si thinfilm solar cells.

Light trapping techniques are one of the key research areas in thin film silicon photovoltaics. Since the 1980s randomly rough textured front transparent oxides (TCOs) have been the methods of choice as light trapping strategies for thin-film devices. Light-trapping efficiency can be optimized by means of optical simulations of nano-structured solar cells. We present a FEM based simulator for 3D rigorous optical modeling of amorphous silicon / microcrystalline silicon tandem thin-film solar cells with randomly textured layer interfaces. We focus strongly on an error analysis study for the presented simulator to demonstrate the numerical convergence of the method and investigate grid and finite element degree refinement strategies in order to obtain reliable simulation results.

Optical methods are powerful and non-destructive means to characterize highly doped transparent conducting oxide thin films. In order to describe the optical properties of high-mobility ZnO films we present a dielectric function composed of different analytic expressions to describe the different contributions to the dielectric function of the films. This allows for the correct description of measured optical spectra and reduces the complex functions to a set of fitting parameters. In a second step we compare the obtained parameters to theoretical models. The basic theories are nicely reproduced and the basic link between optical and electrical properties can be understood. The findings can help on the route to a complete presiction of optical properties from the basic material properties or vice versa.

We apply a hybrid finite element / transfer matrix solver to calculate generation rate spectra of thin film silicon solar cells with textured interfaces. Our focus lies on interfaces with statistical rough textures. Due to limited computational domain size the treatment of such textures requires a Monte Carlo sampling of texture representations to obtain a statistical average of integral target quantities. This contribution discusses our choice of synthetic rough interface generation, the Monte Carlo sampling and the need for an incorporation of the cell's substrate into optical simulation when illumination of the cell happens through the substrate. We present results of the numerical characterization and generation rates for a single junction cell layout.

In superstrate thin-film solar cells light scattering is introduced by the surface texture of the transparent conductive front contact. However, a prerequisite to discuss light trapping in thin-film solar cells is a deeper understanding of the scattering behavior of such randomly textured substrates. The haze, which is widely used to characterize the scattering properties of randomly textured substrates, is an inadequate criterion to correlate the optical quality of the substrate and the measured short circuit current of solar cells. It will be shown that the wavelength dependence of the haze can be used to classify different kind of substrates. Furthermore, the angular resolved scattering properties are analyzed by means of ray tracing based simulation approach. The gained results reveal new aspects for the assessment of light trapping in thin-film silicon solar cells.

This study addresses the design of radio frequency (rf) magnetron sputtered aluminum doped zinc oxide (ZnO:Al) front contacts for silicon thin-film solar cells. Optimized films comprise high conductivity and transparency, as well as a surface topography trapping the light within the photovoltaically active layers. We have investigated the influence of the doping level of the target as well as the substrate temperature during sputter deposition on the ZnO:Al properties. The aluminum content in the target influences the transmission in the near infrared (NIR), the conductivity as well as the film growth of the ZnO:Al layer. The latter affects the surface topography which develops during wet-chemical etching in diluted hydrochloric acid. Depending on aluminum content in the target and heater temperature three different regimes of etching behavior have been identified. We have applied the ZnO:Al films as front contacts in thin-film silicon solar cells to study their light trapping ability. While high transparency is a prerequisite, the light trapping has been improved using front contacts with a surface topography consisting of relatively uniformly dispersed craters. We have identified low amount of target doping and high substrate temperatures as sputter parameters enabling high cell currents. Short-circuit current densities of up to 26.8 mA/cm 2 have been realized in μc-Si:H single junction cell with absorber layer thickness of 1.9 μm.