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Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm2 and pulse duration from microsecond down to sub-nanosecond range. No efficiency decrease and negligible red shift of the emission wavelength is observed in the whole range of drive currents at nanosecond-range pulses with duty cycles well below 1%. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major mechanism of the LED efficiency reduction at higher pumping, dominating over the electron overflow and Auger recombination.

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Discussion of ways to achieve mid and far IR intraband lasing just by lateral electric field carrier (electron or hole) heating in multiple quantum well (MQW) structures is given. It is argued that the Gunn diodes are low frequency indirect transition lasers based on hot electron population inversion arising under electron intervalley transfer. In the MQW structures direct optical transitions exist while hot carrier population inversion can be achieved due to inter-valley/real space transfer. The two MQW structures are considered in this work: GaAs/AlAs and GaAs/InGaAs systems. In the first the hot electron (Gamma) -X intervalley/real space transfer from GaAs layers to AlAs layers provides population inversion while in the second the inversion can arise due to interlevel/interlayer transfer. Evaluations via the Monte-Carlo simulation of the hot electron phenomena in some of the structures are given and observation of the hot carrier phenomena of the type (including far and mid IR emission and absorption) are presented. Consideration of the appropriate laser design which provides also a way to cope with the low frequency (Gunn type) current oscillations is given.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.