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Rotary comb-drive electrostatic actuators with virtual pivotal point of rotation were designed and fabricated for their application in external cavity tunable lasers in Littman configuration. Silicon on insulator (SOI) wafers with device layer thickness of 50 μm and buried oxide layer of 2 μm were used. The structures were fabricated through bulk micromachining of the device layer followed by release of movable arms through wet etching. Six pairs of comb arms were used to symmetrically distribute electrostatic forces on an interconnected movable arm structure. The movable structure consisting of stiff truss connectors in arc shapes on inner and outer periphery was anchored through three beams. Actuation of the movable arms on a circular profile with a virtual pivotal point was achieved for the designed range of operation. A maximum rotation of ± 1.5 degrees at 190 V was achieved. The dimensions of the movable arm are on the order of 1.2-1.5 mm. The actuators have a physical clearance of up to 2.8 mm from the device structure to the virtual pivot point. The sidewalls of the movable arms are accessible for optical applications. The geometrical configuration of the fabricated structures supports the stringent requirements of optical path alignments in external cavity lasers. The fabricated structures can be reliably operated in the kilohertz range

Rotary comb-drive electrostatic actuators with smooth vertical sidewalls were designed and fabricated for photonic applications. Silicon on insulator (SOI) wafers with device layer thicknesses of up to 100 μm and oxide layers of 1-2 μm were used. Structures were fabricated through bulk micromachining of the handle layer followed by removal of the buried oxide. Deep reactive ion etching (DRIE) of the device layer defined the comb structure with simultaneous release of the moving arm. Thick photoresist and oxide masking layers were used for the high aspect ratio deep etches. Notching effects or depth variations of device layers were not observed. Etch/ passivation cycles in DRIE were optimized to obtain smooth sidewalls. Traces of etch scallops were confined only to the first few microns of the top and bottom edges of the reflecting sidewall. A movable arm length of 2 mm with a maximum rotation of 2.8 degrees was achieved. The edge deflection was over 100 μm at 100 volts. The fabricated structure provides a long reflecting sidewall that is accessible for hybrid integration in three dimensional space. The fabricated structures can be reliably operated in the kilohertz range.