Search

We have prepared absorbing structures for photovoltaic cells with different nano-texturization, obtained by means of a femtosecond laser, without the use of corrosive gas (i.e. under vacuum). To take in account the 3D structured front surface, the emitter doping has been realized by using Plasma Immersion Ion Implantation (so-called PULSION). The results show a photocurrent increase up to 60 % in the laser texturized zones.

This paper presents the potential characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intra-chip optical interconnects. Experimental results on the optical absorption, from 1.1 μm to 1.7 μm of Ge layers epitaxially grown on Si are reported, as well as the measured responsivity of an interdigited MSM Ge photodetector. Light coupling from a rib SOI waveguide to a Ge photodetector is studied for two possible configurations: butt coupling or Ge deposition on top of the waveguide. Comparisons between MSM and PIN Ge detectors are carried out by estimating the dark current, capacitance and time response.