1. Si-based resonant cavity light-emitting devices
- Author
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Sebastiano Ravesi, M. Camalleri, Salvatore Coffa, Maria Eloisa Castagna, Alessandro Costa, Anna Muscara, and Simona Lorenti
- Subjects
Ytterbium ,Materials science ,Photoluminescence ,Silicon ,business.industry ,Doping ,chemistry.chemical_element ,Chemical vapor deposition ,law.invention ,Optics ,chemistry ,law ,Q factor ,Optoelectronics ,business ,Luminescence ,Light-emitting diode - Abstract
We report on the fabrication and characterization of Si/SiO 2 Fabry-Perot microcavities. These structure are used to enhance the external quantum emission along the cavity axis and the spectral purity of emission from Rare earth doped and undoped SiOx (x ≤ 2) films that are used as active media to fabricate a Si based RCLED (Resonant Cavity Light emitting Devices). These structures are fabricated by chemical vapour deposition on a silicon substrate. The microcavities are tuned at different wavelengths: 540 nm, 980 nm, 1540 nm, 780 nm and 850 nm (characteristic emission wavelength respectively for Tb, Yb and Er and Silicon Rich Oxide (SRO)). The reflectivity of the microcavities is of 97% and the quality factor ranges from 50 (for the cavity tuned at 540nm) to 95 (for the cavities tuned at 980 nm and 1540 nm) and 150 (for the cavity tuned at 780 nm and 850 nm). These cavities have been characterized by TEM analysis to evaluate film uniformity, thickness and densification after annealing process for temperature ranging from 800° to 1100°C. The reflectivity and photoluminescence spectra show resonant wavelengths in agreement with the calculated values. A new structure to electrically pump the active media has been designed. The electrical properties of the active media have been analysed. An enhancement of the photoluminescence signal of twenty times have been achieved for the selected emission wavelength.
- Published
- 2004