1. Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer.
- Author
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Qiao, Ming, Wang, Yuru, Li, Yanfei, Zhang, Bo, and Li, Zhaoji
- Subjects
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SILICON-on-insulator technology design & construction , *THIN films , *METAL oxide semiconductors , *DOPING agents (Chemistry) , *ELECTRIC breakdown - Abstract
A novel 1200-V ultra-thin partial silicon-on-insulator (PSOI) lateral double-diffusion metal oxide semiconductor (LDMOS) with n-type buried (n-buried) layer (NBL PSOI LDMOS) is proposed in this paper. The new PSOI LDMOS features an n-buried layer underneath the n-type drift (n-drift) region close to the source side, providing a large conduction region for majority carriers and a silicon window to improve self-heating effect (SHE). A combination of uniform and linear variable doping (ULVD) profile is utilized in the n-drift region, which alleviates the inherent tradeoff between specific on-resistance ( R on,sp ) and breakdown voltage (BV). With the n-drift region length of 80 μm, the NBL PSOI LDMOS obtains a high BV of 1243 V which is improved by around 105 V in comparison to the conventional SOI LDMOS with linear variable doping (LVD) profile for the n-drift region (LVD SOI LDMOS). Besides, the 1200-V NBL PSOI LDMOS has a lower maximum temperature ( T max ) of 333 K at a power ( P ) of 1 mW/μm which is reduced by around 61 K. Meanwhile, R on,sp and T max of the NBL PSOI LDMOS are lower than those of the conventional LVD SOI LDMOS for a wide range of BV. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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