1. Thermal effects in photoemission from Bi(111) films on Si(111)-(7×7)
- Author
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Han, Tie-Zhu, Jia, Jin-Feng, Shen, Quan-Tong, Dong, Guo-Cai, and Xue, Qi-Kun
- Subjects
- *
ELECTRON emission , *ELECTRIC discharges , *FREE electron theory of metals , *INTERNAL conversion (Nuclear physics) - Abstract
Abstract: An angle-resolved photoemission study of epitaxied Bi(111) film on Si(111)-(7×7) surface has been carried out at a temperature from 10K to 210K. The results show that there exists strong temperature dependence in the valence band of Bi(111) film. The variations in the spectral intensity and shape indicate the importance of phonon-assisted indirect transition in the photoemission process. The thermal sensitivity coefficients and effective Debye temperatures for main spectral peaks are determined from the experimental data. [Copyright &y& Elsevier]
- Published
- 2008
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