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Abstract: We demonstrated that the electrical properties of pentacene-thin film transistors with low-cost Cu electrodes can be enhanced by inserting a thin MoO x interlayer layer between pentacene and Cu source/drain (S/D) electrodes. In comparison with the device having Cu-only electrodes, the performance of the device with MoO x /Cu electrodes was significantly improved. The saturation mobility increased from 0.13 to 0.61cm2/Vs, threshold voltage reduced from −14.5 to −7.3V, on/off ratio shifted from 8.9×105 to 1.6×106 and threshold swing varied from 1.92 to 1.33V/decade. The improvement was attributed to the reduction of contact resistance and the enhancement of hole-injection efficiency. The results suggest modification of Cu S/D electrodes is a simple and effective way to improve device performance and reduce the fabrication cost. [Copyright &y& Elsevier]

Abstract: Highly efficient Si-based top-emitting organic light-emitting device (TOLED) using MoO x buffer layer is demonstrated. With tris(8-hydroquinoline) aluminum as emitting and electron-transport layer, the p-Si/MoO x based TOLED shows a maximum luminous efficiency of 1.1cd/A and a power efficiency of 0.68lm/W, which are almost double those (0.64cd/A and 0.34lm/W) of p-Si/SiO2 based TOLED. Moreover, in comparison with the widely used thermally grown SiO2 buffer layer, MoO x can be deposited by conventional evaporation technology and thereby simplifying fabrication process. [Copyright &y& Elsevier]