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We report an experimental study of the electrical properties of the interface between the Al2O3 passivating coating grown by plasma enhanced atomic layer deposition at different temperatures and the p-CdHgTe (xCdTe = 0.22) coating grown by molecular beam epitaxy via measuring the C–V characteristics of MIS structures. It has been established that, at an Al2O3 growth temperature of 200°C, the concentration of acceptors in CdHgTe increases due to dissociation and, at a temperature of 80°C, the spread of the insulator capacitance and built-in charge increases. The optimum temperature for growing the passivating Al2O3 coating on CdHgTe lies in the range of 120–160°C. [ABSTRACT FROM AUTHOR]

The impurity-defect structure of heteroepitaxial CdHgTe/Si (0.35 < x < 0.39) layers grown by molecular beam epitaxy for the creation of arsenic-ion-implanted p- n junctions has been studied by the photoluminescence method. It is established that full realization of the possibilities of p-on- n photodiode structures based on the CdHgTe/Si system is hindered by uncontrolled doping of the material that leads to the formation of both shallow (impurity level energy ∼10 meV) and deep (∼50 meV) acceptor levels. [ABSTRACT FROM AUTHOR]

We have studied the formation and modification of germanium nanoclusters in GeO x films under the action of pulse laser and isochronous furnace annealing. Pulse treatments were effected using either a Tisapphire laser operating at a wavelength of λ = 800 nm and a pulse duration τ of about 30 fs or a KrF excimer laser with λ = 248 nm and τ = 25 ns. The pulse annealing stimulated both the crystallization of initial amorphous Ge nanoclusters in GeO x matrix and the formation of new nanoclusters. In order to prevent the evaporation of films under the action of laser radiation, the samples were covered with a protective layer of SiN xO y. The proposed approach can be used for the modification of dimensions and phase composition of Ge clusters in GeO x films. [ABSTRACT FROM AUTHOR]