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For the first time standard low-temperature (< 300 °C) plasma-enhanced chemical vapor deposition technology has been used to obtain a-Si(Er):H films emitting at 1.54 µm at room temperature. The fluorine-containing metalorganic compound Er(HFA)[sup *, sub 3]DME, exhibiting enhanced volatility and fairly good thermal stability, was used for the first time as the Er source. The establishment of photoconduction in the synthesized samples indicates that they are of satisfactory electronic quality and potentially useful for developing light-emitting diodes at 1.54 µm. [ABSTRACT FROM AUTHOR]

Silicon is now the most important material in modern solid-state electronics. Regular systems of silicon nanoclusters containing up to 10[sup 14] cm[sup -3] elements were obtained in a sublattice of opal (SiO[sub 2]) voids. By using three-dimensional dielectric matrix-carriers similar to opal, it may be possible to obtain three-dimensional ensembles of semiconductor nanodevices. Various parameters of these "opal-silicon" nanocomposites were measured. [ABSTRACT FROM AUTHOR]