248 results on '"Ustinov V."'
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2. Impact of Transverse Optical Confinement on Performance of 1.55 μm Vertical-Cavity Surface-Emitting Lasers with a Buried Tunnel Junction
3. Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction
4. Investigation of the Noise Characteristics of Vertical-Cavity Surface-Emitting Laser with a Rhomboidal Oxide Current Aperture for Use in a Cs-Based Compact Atomic Magnetometer
5. Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes
6. Development and Study of a Model of an Autonomous Energy Information Station of Free Space Optical Communication
7. Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
8. The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts
9. The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology
10. A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers
11. InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
12. Heterobarrier Varactors with Nonuniformly Doped Modulation Layers
13. Microwave Giant Magnetoresistance in [CoFe/Cu]n Superlattices with Record-High Magnetoresistance
14. Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction.
15. The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers
16. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)
17. Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current
18. Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature
19. Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots
20. A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range
21. Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
22. MOVPE of III-N LED structures with short technological process
23. Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators
24. Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture
25. Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers
26. MBE growth of 5 μm quantum cascade lasers
27. Effect of Si(100)-c(4 × 12)-Al and Si(111)-(5.55 × 5.55)-Cu reconstructions on the deposition of cobalt onto silicon surface
28. Mössbauer spectroscopy study of the formation of Fe layers in Fe/Cr superlattices
29. Electromagnetic wave reflection from Fe/Cr nanostructures
30. Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices
31. Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum states
32. Peculiarities in the morphology of ge island array on Si(100) at a subcritical thickness of the deposited Ge layer
33. Peculiarities of the MBE growth of nanowhiskers on GaAs(100) substrates
34. Temperature variation of the morphology of nanocluster ensembles in the Ge/Si(100) system
35. The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures
36. Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer
37. Impact of transverse optical confinment on performance of 1.55 μm vertical-cavity surface-emitting lasers with a buried tunnel junction
38. Peculiarities of growth of InAs quantum dot arrays with low surface density by molecular beam epitaxy
39. Analysis of internal optical loss of 1.3 μm vertical-cavity surface-emitting laser based on n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs tunnel junction
40. Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen
41. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters
42. Studying the formation of self-assembled (In,Mn)As quantum dots
43. Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface
44. Optical anisotropy of InAs quantum dots
45. High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm
46. Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates
47. Increase in the density of β-FeSi2 nanoclusters on a Si(111) surface by means of Si(111) √3 × √3R30°-B reconstruction
48. Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range
49. Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing
50. The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system
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