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Dielectric measurements were carried out on moderately doped n-InP at low temperatures down to 10 K and at frequencies in the range of 120-105 Hz. The low-temperature asymptotic value of the relative dielectric constant (\( \varepsilon_{r}\)) was found to be greater than the host crystal value. The excess of \( \varepsilon_{r}\) above the host crystal value is attributed to the contribution of impurities. This contribution is originated from an overlap between adjacent wave functions of the impurities. A comparison was made with the theoretical approach taking into account the effect of such overlap and a good agreement was obtained.

Hole mobility and effective Hall factor for p -type GaSb were studied theoretically as a function of temperature from 10K up to 300K. The mobility calculations were based on the relaxation time approximation taking into account elastic scattering mechanisms including lattice and ionized-impurity types. The results showed that the ionized-impurity scattering is the dominant mechanism at low-temperature range while lattice scattering may be the dominant one at higher temperatures. The effective Hall factor was investigated using the two-band model assuming parabolic valence bands. Hall parameters of p -GaSb were analyzed by assuming that the bands of heavy and light holes are decoupled. If the impurity scattering exceeds all other scattering processes, the effective Hall factor may tend to unity but when the lattice scattering process dominates, this approximation is not valid.