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Photoinduced phase separation, which limits the available band gap energies for photovoltaic applications, was reported for a range of mixed-halide perovskites. A microscopic understanding of the phase separation mechanism is still lacking but may be beneficial to rationalize limitations as well as enable the design of phase-stable perovskite semiconductors. In this letter, electron-beam-induced phase separations and transformations were investigated in a small crystallite of CsPb(Br0.8I0.2)3 by means of in situ high-resolution imaging in a transmission electron microscope. The acquired time series was evaluated using principal and independent component analysis to classify the structural change during the illumination by the electron beam. A more iodine-rich phase with the approximate composition of CsPb(Br0.6I0.4)3 was found to form at the edges of the particle, while a ternary pure bromide phase of CsPbBr3 remained at its center. These results provide an atomistic picture of in-grain phase segregation into iodide-rich phases at grain boundaries and bromide-rich phases in the interior of the grain.

Nonradiative losses in semiconductors are related to defects. At cryogenic temperatures, defect-related photoluminescence (PL) at energies lower than the band-edge PL is observed in methylammonium lead triiodide perovskite. We applied multispectral PL imaging to samples prepared by two different procedures and exhibiting 1 order of magnitude different PL quantum yield (PLQY). The high-PLQY sample showed concentration of the emitting defect sites around 10

Photoluminescence (PL) of organo-metal halide perovskite semiconductors can be enhanced by several orders of magnitude by exposure to visible light. We applied PL microscopy and super-resolution optical imaging to investigate this phenomenon with spatial resolution better than 10 nm using films of CH3NH3PbI3 prepared by the equimolar solution-deposition method, resulting in crystals of different sizes. We found that PL of ∼100 nm crystals enhances much faster than that of larger, micrometer-sized ones. This crystal-size dependence of the photochemical light passivation of charge traps responsible for PL quenching allowed us to conclude that traps are present in the entire crystal volume rather than at the surface only. Because of this effect, "dark" micrometer-sized perovskite crystals can be converted into highly luminescent smaller ones just by mechanical grinding. Super-resolution optical imaging shows spatial inhomogeneity of the PL intensity within perovskite crystals and the existence of100 nm-sized localized emitting sites. The possible origin of these sites is discussed.