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The past few years witnessed the rise of halide perovskites as prominent materials for a wide range of optoelectronic applications. However, oxide perovskites have a much longer history and are pivotal in many technological applications. As of today, a rational connection between these important materials is missing. Here, we explore this missing link and develop a novel concept of perovskite analogs, which led us to identify a new semiconductor, Ba2AgIO6. It exhibits an electronic band structure remarkably similar to that of our recently discovered halide double perovskite Cs2AgInCl6, but with a band gap in the visible range at 1.9 eV. We show that Ba2AgIO6 and Cs2AgInCl6 are analogs of the well-known transparent conductor BaSnO3. We synthesize Ba2AgIO6 following a low-temperature solution process, and we perform crystallographic and optical characterizations. Ba2AgIO6 is a cubic oxide double perovskite with a direct low gap, opening new opportunities in perovskite-based electronics optoelectronics and e...

International audience; Lead-free halide double perovskites have attracted considerable attention as complements to lead-based halide perovskites in a range of optoelectronic applications. Experiments on Cs(2)AgBiBr(6) indicate carrier mobilities in the range of 0.3-11 cm(2)/(V s) at room temperature, considerably lower than in lead-based perovskites. The origin of low mobilities is currently unclear, calling for an atomic-scale investigation. We report state-of-the-art ab initio calculations of the phonon-limited mobility of charge carriers in lead-free halide double perovskites Cs(2)AgBiX(6) (X = Br, Cl). For Cs(2)AgBiBr(6), we obtain room-temperature electron and hole mobilities of 17 and 14 cm(2)/(V s), respectively, in line with experiments. We demonstrate that the cause for the lower mobility of this compound, compared to CH(3)NH(3)PbI(3), resides in the heavier carrier effective masses. A mode-resolved analysis of scattering rates reveals the predominance of Fröhlich electron-phonon scattering, similar to lead-based perovskites. Our results indicate that, to increase the mobility of lead-free perovskites, it is necessary to reduce the effective masses, for example by cation engineering.

We investigate from first principles exciton-phonon interactions in monolayer germanium selenide, a direct gap two-dimensional semiconductor. By combining the Bethe-Salpeter approach and the special displacement method, we explore the phonon-induced renormalization of the exciton wave functions, excitation energies, and oscillator strengths. We determine a renormalization of the optical gap of 0.1 eV at room temperature, which results from the coupling of the exciton with both acoustic and optical phonons, with the strongest coupling to optical phonons at ∼100 cm-1. We also find that the exciton-phonon interaction is similar between monolayer and bulk GeSe. Overall, we demonstrate that the combination of many-body perturbation theory and special displacements offers a new route to investigate electron-phonon couplings in excitonic spectra, the resulting band gap renormalization, and the nature of phonons that couple to the exciton.

During the past year, halide double perovskites attracted attention as potential lead-free alternatives to Pb-based halide perovskites. However, none of the compounds discovered so far can match the optoelectronic properties of MAPbI3 (MA = CH3NH3). Here we argue that, from the electronic structure viewpoint, the only option to make Pb-free double perovskites retaining the remarkable properties of MAPbI3 is to combine In and Bi as B(+) and B(3+) cations, respectively. While inorganic double perovskites such as Cs2InBiX6 were found to be unstable due to In(+) oxidizing into In(3+), we show that the +1 oxidation state of In becomes progressively more stable as the A-site cation changes from K to Cs. Hence, we propose the use of MA and FA [FA = CH(NH2)2] to stabilize A2InBiBr6 double perovskites. We show that the optoelectronic properties of A2InBiBr6 are remarkably similar to those of MAPbI3, and explore the mixed-cation (Cs/MA/FA)2InBiBr6 halide double perovskites.

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The past few years witnessed the rise of halide perovskites as prominent materials for a wide range of optoelectronic applications. However, oxide perovskites have a much longer history and are pivotal in many technological applications. As of today, a rational connection between these important materials is missing. Here, we explore this missing link and develop a novel concept of perovskite analogs, which led us to identify a new semiconductor, Ba

Owing to their record-breaking energy conversion efficiencies, hybrid organometallic perovskites have emerged as the most promising light absorbers and ambipolar carrier transporters for solution-processable solar cells. Simultaneously, due to its exceptional electron mobility, graphene represents a prominent candidate for replacing transparent conducting oxides. Thus, it is possible that combining these wonder materials may propel the efficiency toward the Schokley-Queisser limit. Here, using first-principles calculations on graphene-CH3NH3PbI3 interfaces, we find that graphene suppresses the octahedral tilt in the very first perovskite monolayer, leading to a nanoscale ferroelectric distortion with a permanent polarization of 3 mC/m(2). This interfacial ferroelectricity drives electron extraction from the perovskite and hinders electron-hole recombination by keeping the electrons and holes separated. The interfacial ferroelectricity identified here simply results from the interplay between graphene's planar structure and CH3NH3PbI3's octahedral connectivity; therefore, this mechanism may be effective in a much broader class of perovskites, with potential applications in photovoltaics and photocatalysis.

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The recent discovery of lead-free halide double perovskites with band gaps in the visible represents an important step forward in the design of environmentally friendly perovskite solar cells. Within this new family of semiconductors, Cs2BiAgCl6 and Cs2BiAgBr6 are stable compounds crystallizing in the elpasolite structure. Following the recent computational discovery and experimental synthesis of these compounds, a detailed investigation of their electronic properties is warranted in order to establish their potential as optoelectronic materials. In this work, we perform many-body perturbation theory calculations and obtain high accuracy band gaps for both compounds. In addition, we report on the synthesis of Cs2BiAgBr6 single crystals, which are stable in ambient conditions. From our complementary theoretical and experimental analysis, we are able to assign the indirect character of the band gaps and obtain both experimental and theoretical band gaps of these novel semiconductors that are in close agreement.

Bulk 2H-TaSe2 is a model charge density wave (CDW) metal with superconductivity emerging at extremely low temperature (Tc = 0.1 K). Here, by first-principles calculations including the explicit calculation of the screened Coulomb interaction, we demonstrate enhanced superconductivity in the CDW state of monolayer 1H-TaSe2 observed in recent experiments. Its ground-state 3 × 3 CDW phase features triangular clustering of Ta atoms and possesses a large electron-phonon coupling of λ = 0.74, yielding an order of magnitude higher superconducting Tc compared to the bulk. Upon lowering the thickness from bulk to monolayer TaSe2, the CDW intensifies with slightly decreased Fermi-level density of states, while superconductivity gets boosted via a largely increased intrinsic electron-phonon coupling strength, which overcomes both the CDW effect and naturally reinforced Coulomb repulsion. These results uncover the simultaneously enhanced CDW and superconducting orders in the two-dimensional limit for the first time and have key implications for other CDW metals like 2H-TaS2.

A$_2$BB$^\prime$X$_6$ halide double perovskites based on bismuth and silver have recently been proposed as potential environmentally-friendly alternatives to lead-based hybrid halide perovskites. In particular, Cs$_2$BiAgX$_6$ (X = Cl, Br) have been synthesized and found to exhibit band gaps in the visible range. However, the band gaps of these compounds are indirect, which is not ideal for applications in thin film photovoltaics. Here, we propose a new class of halide double perovskites, where the B$^{3+}$ and B$^{+}$ cations are In$^{3+}$ and Ag$^{+}$, respectively. Our first-principles calculations indicate that the hypothetical compounds Cs$_2$InAgX$_6$ (X = Cl, Br, I) should exhibit direct band gaps between the visible (I) and the ultraviolet (Cl). Based on these predictions, we attempt to synthesize Cs$_2$InAgCl$_6$ and Cs$_2$InAgBr$_6$, and we succeed to form the hitherto unknown double perovskite Cs$_2$InAgCl$_6$. X-ray diffraction yields a double perovskite structure with space group $Fm\overline{3}m$. The measured band gap is 3.3 eV, and the compound is found to be photosensitive and turns reversibly from white to orange under ultraviolet illumination. We also perform an empirical analysis of the stability of Cs$_2$InAgX$_6$ and their mixed halides based on Goldschmidt's rules, and we find that it should also be possible to form Cs$_2$InAg(Cl$_{1-x}$Br$_{x}$)$_6$ for $x