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Abstract: HfO2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO2 films at 1064nm and 532nm are dominated by the nodular-defect density in coatings, while the 355nm LIDT is dominated by the film absorption. HfO2 films with higher 1064nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100V. [Copyright &y& Elsevier]

Abstract: Growth stress in hafnium oxide/silicon dioxide (HfO2/SiO2) multilayers was measured in situ to understand the role of the sublayers and the influence of the underlayers'' structural features. Experiments using three- and six-layer films were performed by electron-beam evaporation. During deposition, the developing trend of the force per unit width was controlled by changing the thickness ratio of the HfO2 and SiO2 layers. The substrate material affected the initial stress evolution of HfO2 film. The structural feature of the HfO2 layer onto which SiO2 was deposited and the whole film thickness have a combined effect on the stress evolution of the SiO2 layer. [Copyright &y& Elsevier]