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Abstract: Interdigitated capacitors containing the field-tunable ferroelectric Ba0.75Sr0.25TiO3, polycrystalline alumina substrates, and copper metallization have been fabricated. Dielectric layers were prepared by magnetron sputtering, while the Cu metallization was evaporated. The dielectric tunability of the Ba0.75Sr0.25TiO3 was 40% at an applied electric field of 12 V/μm. This corresponds to a 3-μm electrode gap width and a 35 V dc bias. Low-frequency (1 MHz) loss tangent measurements indicate a dielectric Q (quality factor) of ∼100 while microwave measurements reveal a zero bias device Q of ∼30 at 26 GHz. These values are comparable or superior to numerous reports of barium strontium titanate interdigitated capacitors prepared using single crystalline substrates and noble metallization. As such, this technology is significantly less expensive and more amenable to large-volume manufacturing. [Copyright &y& Elsevier]

The solely orientation-related effects on ferroelectric and piezoelectric properties of Pb(Zr0.3,Ti0.7)O3 (PZT) thin films with identical processing conditions were investigated using near lattice matched Pt electrodes, that is, (111)-textured Pt for (111)-oriented PZT thin films and (100)-textured Pt for (100)-oriented films. As a result, the film composition, microstructure, and topography were highly similar in all cases. (111)-oriented tetragonal PZT films exhibited highly rectangular P–V hysteresis loops with a slightly better fatigue endurance than the (100)-oriented films. However, the measured d33 values of (100)-oriented PZT films were somewhat higher than those of (111)-oriented films, indicating a consistency with C–V curves. It was shown that in tetragonal symmetry, the intrinsic effect was largest in the piezoelectricity of PZT thin films. [Copyright &y& Elsevier]