1. Enhanced tunability of transparent epitaxial Ba0.5Sr0.5TiO3/Ga2O3/GaN structures fabricated by pulsed laser deposition
- Author
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Chae-Ryong Cho, Sung-Hee Jeong, Jae-Yeol Hwang, Jong Pil Kim, Jeong-Soo Kim, Sung-Hyun Lee, Soon-Gil Yoon, and Kyun Ahn
- Subjects
Materials science ,business.industry ,Metals and Alloys ,Heterojunction ,Surfaces and Interfaces ,Dielectric ,Epitaxy ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Pulsed laser deposition ,Materials Chemistry ,Optoelectronics ,Dielectric loss ,Thin film ,business ,Layer (electronics) ,Deposition (law) - Abstract
We fabricated all-epitaxial Ba0.5Sr0.5TiO3 (BST) (111)/β-Ga2O3 (− 201) thin films on GaN (002)/Al2O3 (001) substrates by pulsed laser deposition. BST films with different textures were obtained by depositing β-Ga2O3 buffer layers on GaN substrates under varied deposition conditions. The results for dielectric constant, tunability, and dielectric loss of the BST/Ga2O3/GaN and BST/GaN layers at an applied voltage of 20 V, were 225 and 199, 20% and 14%, and 0.006 and 0.018, respectively. The epitaxial growth of the BST film and enhancement of the dielectric properties of the BST/Ga2O3/GaN heterostructure were achieved in the presence of an epitaxial Ga2O3 buffer layer.
- Published
- 2013
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