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Abstract: HfO2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO2 films at 1064nm and 532nm are dominated by the nodular-defect density in coatings, while the 355nm LIDT is dominated by the film absorption. HfO2 films with higher 1064nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100V. [Copyright &y& Elsevier]