1. Influence of Si on stability of TiC in Al melts
- Author
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Hai-min Ding and Xiangfa Liu
- Subjects
Materials science ,Silicon ,Melting temperature ,Metallurgy ,Metals and Alloys ,Lattice distortion ,Thermodynamics ,chemistry.chemical_element ,Crystal structure ,Geotechnical Engineering and Engineering Geology ,Condensed Matter Physics ,Melt temperature ,chemistry ,Materials Chemistry - Abstract
The influence of Si on the stability of TiC in Al melts was studied. It is found that TiC particles in Al melts become unstable with the addition of Si. When the melting temperature is below 890 °C, TiC will react with Al and Si to form TiAl x Si y and Al 4 C 3 phases. But if the melt temperature is above 890 °C, TiC will react with Al and Si to form to Ti 3 SiC 2 and Al 4 C 3 . It is considered that the influence of Si on the stability of TiC in Al melts is due to its incursion into TiC crystal lattice during the holding, which will cause serious lattice distortion in TiC and then speed up the out-diffusion of surrounded C atoms.
- Published
- 2011
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