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To provide a direct comparison, off-axis holography and differential phase contrast have been performed using the same microscope on the same specimens for the measurement of active dopants and piezoelectric fields. The sensitivity and spatial resolution of the two techniques have been assessed through the study of a simple silicon p-n junction observed at different bias voltages applied in-situ. For an evaluation of limitations and artefacts of the methods in more complicated systems a silicon pMOS device and an InGaN/GaN superlattice with 2.2-nm In 0.15 Ga 0.85 N quantum wells is investigated. We demonstrate the effects of dynamical scattering on the electric field measurements in the presence of local strain-induced sample tilts and its dependence on parameters like the convergence angle., (Copyright © 2019 Elsevier B.V. All rights reserved.)

Convergent beam electron diffraction (CBED), nano-beam electron diffraction (NBED or NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography (DFEH or HoloDark) are five TEM based techniques able to quantitatively measure strain at the nanometer scale. In order to demonstrate the advantages and disadvantages of each technique, two samples composed of epitaxial silicon-germanium layers embedded in a silicon matrix have been investigated. The five techniques are then compared in terms of strain precision and accuracy, spatial resolution, field of view, mapping abilities and ease of performance and analysis., (Copyright © 2013 Elsevier B.V. All rights reserved.)

Dark field electron holography is a new TEM-based technique for measuring strain with nanometer scale resolution. Here we present the procedure to align a transmission electron microscope and obtain dark field holograms as well as the theoretical background necessary to reconstruct strain maps from holograms. A series of experimental parameters such as biprism voltage, sample thickness, exposure time, tilt angle and choice of diffracted beam are then investigated on a silicon-germanium layer epitaxially embedded in a silicon matrix in order to obtain optimal dark field holograms over a large field of view with good spatial resolution and strain sensitivity., (Copyright © 2010 Elsevier B.V. All rights reserved.)

A SiGe layer epitaxially grown on a silicon substrate is experimentally studied by convergent beam electron diffraction (CBED) experiments and used as a test sample to analyse the higher-order Laue zones (HOLZ) line splitting. The influence of surface strain relaxation on the broadening of HOLZ lines is confirmed. The quantitative fit of the observed HOLZ line profiles is successfully achieved using a formalism particularly well-adapted to the case of a z-dependent crystal potential (z being the zone axis). This formalism, based on a time-dependent perturbation theory approach, proves to be much more efficient than a classical Howie-Whelan approach, to reproduce the complex HOLZ lines profile in this heavily strained test sample.

The Geometrical phase analysis, which is a very efficient method to measure deformation from High resolution transmission electron microscopy images, is studied from a theoretical point of view. We point out that the basic property of this method is its ability to measure local reciprocal lattice parameters with a high level of accuracy. We attempt to provide some insights into (a) different formula used in the geometrical phase analysis such as the well-known relation between phase and displacement: Pg(r)=-2pi g.u(r), (b) the two different definitions of strain, each of which corresponding to a different lattice reference and (c) the meaning of a continuous displacement in a dot-like high resolution image. The case of one-dimensional analysis is also presented. Finally, we show that the method is able to give the position of the dot that is nearest to a given pixel in the image.