Search

Abstract: The TiO x thin films were prepared by electron beam evaporation using TiO as the starting material. The effect of the annealing temperature on the optical and electrical properties was investigated. The spectra of X-ray photoelectron spectroscopy reveal that Ti in the films mainly exist in the forms of Ti2+ and Ti3+ below 400°C 24h annealing. The charge transfer between different titanium ion contribute greatly to the color, absorption, and electrical resistance of the films. [Copyright &y& Elsevier]

Abstract: The laser-induced damage of Ta2O5 films annealed at a wide range of temperature (473–1273K) at the laser wavelengths of 1064 and 355nm was investigated. The relations between microstructure, optical properties, chemical composition, absorption and laser-induced damage threshold (LIDT) were studied. The dependence of a damage mechanism on laser wavelengths was discussed. It was found that the LIDT either at 1064 or 355nm first increased and then decreased with increase of annealing temperature. The LIDT at 1064nm was influenced by the substoichiometric defects, structural defects and thermal diffusion, whereas at 355nm it was affected mainly by the intrinsic absorption and structural defects. Both the maximum LIDT at the two wavelengths were obtained at the annealing temperature of 873K, which could be attributed to the lowest defect density in films. [Copyright &y& Elsevier]