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The decay of115mIn has been investigated using accurate counting methods. The emission rate of conversion electrons plusß--particles was determined with a 4p proportional flow counter. The total andK-shell internal conversion coefficients of the 336 keV?-ray in115In were measured by the electron X-ray coincidence method using combinations of a Si surface barrier with a NaI(Tl) detector and of a magneticß-spectrometer with a high energy resolution Si(Li) detector, respectively. The conversion ratioR=K/(L+M+...) was deduced from electron spectra recorded with the magneticß-spectrometer. The 336 keV?-ray emission rate of all used sources was determined with a calibrated NaI(Tl)?-ray spectrometer. A Ge(Li) detector has been used to determine the relative intensity of the 497 keV?-ray in115Sn. As results have been deduced the 336 keV?-ray emission per decay (N?1/N0=(45.9 ± 0.1)%), the total internal conversion coefficient (a=1.073 ± 0.014), theK-shell internal conversion coefficient (aK=0.843±0.012), the conversion ratioR=3.63±0.07, theß--transition per decay going to the ground state (Nß1/N0=(5.0 ± 0.7)%) and to the first excited level in115Sn115Sn(Nß2/N0=(0.047 ± 0.002)%), and the 497 keV?-ray emission (N?2/N?1=(0.103 ± 0.004)%). From the obtained internal conversion data it follows that the 336 keV?-ray transition is ofM4 character with anE5 admixture of less than (3.5±1.5)%. The half-life of the isomeric state115mIn has been determined with four different methods. The result isT1/2=(4.486±0.004) h.

The branching ratios in the65Zn decay have been reinvestigated using several precision methods. The ratios of the γ-emission rate to the total decay rate and of the β+-emission rate to the total decay rate have been determined to be 0.5075±0.0010 and 0.0146±0.0002, respectively. A value of (244.0±0.2) d has been found for the half-life. All cited errors are estimated to correspond to a confidence level of 68%.