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BiFe1-xZnxO3 (BFZO) (x = 0, 2%, 4%, 6%) thin films were successfully prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The effect of Zn doping on the structure, surface morphology, leakage current density, ferroelectric and ferromagnetic properties of BiFeO3 (BFO) thin films were investigated systematically. XRD patterns show that all samples match well with the perovskite structure without impurity phase. SEM images show that BFZO thin films with x = 4% exhibit uniform fine grains and higher density, which is instrumental for the improvement of leakage current density. The leakage current density curve shows that BiFe0.96Zn0.04O3 thin films have the lowest leakage current density (J = 1. 56 x 10-6 A/cm²) under the electric field strength of 300 kV/ cm, which is three orders of magnitude lower than that of pure BFO thin films. Furthermore, BiFe0.96Zn0.04O3 thin film exhibits the largest remnant polarization (2Pr = 20. 91 μC/cm²) at room temperature, which is more than four times as large as that of pure BFO (2Pr = 4. 96 μC/cm²). Additionally, compared with BFO thin film, Zn doping also enhances the ferromagnetic properties of BFO thin films, and as Zn doping concentration increases, the saturation magnetization of BFZO thin films is significantly enhanced, which provides potential applications in information storage. [ABSTRACT FROM AUTHOR]