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Under fatigue load, insulated gate bipolar transistor (IGBT) experience structural damage and performance degradation, imparting the reliability of power electronic systems. To address this, the relationship between solder layer fatigue crack length and thermal resistance is derived based on heat transfer theory, firstly. The Darveaux model is used to characterize the evolution law of solder layer cracks in IGBT, and a new IGBT performance degradation model along with a method for estimating its undetermined coefficients is proposed. Then, considering the non-stationary characteristics of actual working conditions, a variable amplitude fatigue load model for IGBT is established using the response surface methodology. The rain flow counting method and linear cumulative damage citation are then employed to assess the extent of IGBT performance degradation. Finally, using a type of IGBT product as an example, power cycling thesis are conducted, and performance degradation modeling and analysis are carried out based on experimental data, verifying the effectiveness of the models and algorithms. [ABSTRACT FROM AUTHOR]

Copyright of Electric Power Automation Equipment / Dianli Zidonghua Shebei is the property of Electric Power Automation Equipment Press and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Electric Machines & Control / Dianji Yu Kongzhi Xuebao is the property of Electric Machines & Control and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Journal of Mine Automation is the property of Industry & Mine Automation Editorial Department and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Journal of Beijing University of Technology is the property of Journal of Beijing University of Technology, Editorial Department and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Electroplating & Finishing is the property of Electroplating & Finishing Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Experimental Technology & Management is the property of Experimental Technology & Management Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Copyright of Journal of Chongqing University of Posts & Telecommunications (Natural Science Edition) is the property of Chongqing University of Posts & Telecommunications and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The computer simulation is inseparable in the process of integrated circuit design. The simulation accuracy depends on not only the device model itself, but also parameter values of a given device model, so accurately extracting values the of model parameters is critical. BJT (Bipolar junction transistor) is an important component unit of integrated circuits. In order to make the students have a comprehensive and profound understand the meanings of parameters of the transistor of bipolar transistor integrated circuit the correlative equations were introduced based on analyzing the transistor EM model. A simple method of model parameter extraction was put forward. Finally, the experimental method and instrument for extracting the model parameters of the bipolar transistor were present. This method has certain referencing significance for improving students intuitive understanding of the bipolar transistor model parameters. [ABSTRACT FROM AUTHOR]

PWM modulation technology of Insulated Gate Bipolar Transistor (IGBT) in cascade STATCOM produces a great deal of harmonic, which causes secondary-pollution to the grid. LCL filter becomes an idea filter for cascade STATCOM, characterized of its high low-frequency gain and high-frequency switching harmonics suppression, but the three-order character of LCL filter increases the difficulty of current control. This study proposed the use of a second order low-pass filter and a PI controller for ensuring rapid dynamic response and high static accuracy in low frequency of the inner current loop. Secondly, the repetitive control used as outer current loop was adopted to solve the difficulty of inner current loop in realizing zero static error tracking of referenced harmonic current. The results show that the current control strategy can efficiently restrain the harmonic interference and track the reference current. Eventually simulation results and the actual device experiments verify the effectiveness of the proposed current control strategy. [ABSTRACT FROM AUTHOR]