1. Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor
- Author
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CHU Fei, CHEN Hongzhuan, PENG Ling, WANG Ying, and NING Jingyi
- Subjects
power ic ,lateral diffused metal oxide semiconductors ,single event burnout ,single event gate rupture ,Nuclear and particle physics. Atomic energy. Radioactivity ,QC770-798 ,Medical physics. Medical radiology. Nuclear medicine ,R895-920 - Abstract
Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with a breakdown voltage of 60 V was designed.We analyzed the radiation hardening mechanism of the heavily doped P+well and buffer layer structures using the Ta ion model (Linear energy transfer, LET=79.2 MeV·cm2/mg) with a TCAD simulation tool and verified it via an irradiation test. The results revealed that by using the heavily doped P+well and buffer layer structures, the single event burnout voltage of the high-voltage LDMOS could be improved to 60 V.
- Published
- 2022
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