1. Domain structure of epitaxial CaHfO[sub 3] gate insulator films on SrTiO[sub 3].
- Author
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Shibuya, Keisuke, Ohnishi, Tsuyoshi, Lippmaa, Mikk, Kawasaki, Masashi, and Koinuma, Hideomi
- Subjects
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THIN films , *SURFACES (Physics) , *EPITAXY , *TRANSITION metal oxides , *DIELECTRICS , *TUNNEL construction equipment - Abstract
Thin CaHfO[sub 3] films were grown on (100) and (110)-oriented SrTiO[sub 3] surfaces with the aim of obtaining an insulator film for epitaxial oxide device design. We show that films grown on the (100) surface of SrTiO[sub 3] have a multidomain structure, which increases film roughness and decreases the maximum breakdown field of the insulator. Single-domain films were obtained on the SrTiO[sub 3] (110) surface. These films had a breakdown field of 5 MV/cm and a dielectric constant of [variant_greek_epsilon][sub r]=16 to 17 at room temperature. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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