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The recently demonstrated semiconductor grafting approach allows one to create an abrupt, low interface-trap-density heterojunction between a high-quality p-type single-crystalline semiconductor (non-nitrides) with n-type GaN. However, due to the surface band-bending from GaN polarization, an energy barrier exists at the grafted heterojunction, which can impact the vertical charge carrier transport. Reducing the energy barrier height is essential for some advanced device development. In this work, we employed UV/O3 and O2 plasma to treat a Ga-polar GaN surface with/without an ultrathin (∼2 nm) ALD-Al2O3 coating and studied the effects of the treatments on surface band-bending. Through XPS measurements, it was found that the treatments can suppress the upward band-bending of the Ga-polar GaN by 0.11–0.39 eV. The XPS results also showed that UV/O3 treatment is an effective surface cleaning method with little surface modification, while O2 plasma causes a strong oxidation process that occurs inside the top layer GaN. [ABSTRACT FROM AUTHOR]

Ionic conductivity in a polymeric fuel cell requires water uptake. Previous theoretical studies of water uptake used idealized parameters. We report a parameter-free prediction of the water-swelling behavior of a model fuel cell membrane. The model polymers, poly(methyl-butylene)-block-poly(vinylbenzyl-trimethylamine), form lamellar domains that absorb water in humid air. We use the Scheutjens-Fleer methodology to predict the resulting change in lamellar structure and compare with x-ray scattering. The results suggest locally uniform water distributions. However, under conditions where a PVBTMA and water mixture phase-separate, the two phases arrange into stripes with a dilute stripe sandwiched between two concentrated stripes. A small amount of water enhances conductivity most when it is partitioned into such channels, improving fuel-cell performance.